BCP68T1
NPN Silicon
Epitaxial Transistor
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
•
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation @ T
(Note 1)
Derate above 25°C
Operating and Storage Temperature
Range
Thermal Resistance,
Junction−to−Ambient (Surface Mounted)
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
This NPN Silicon Epitaxial Transistor is designed for use in low
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
High Current: I
The SOT−223 package can be soldered using wave or reflow
SOT−223 package ensures level mounting, resulting in improved
The PNP Complement is BCP69T1
Pb−Free Packages are Available
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Characteristic
Rating
C
= 1.0 A
(T
C
A
= 25°C unless otherwise noted)
Preferred Device
= 25°C
Symbol
Symbol
T
V
V
V
R
J
P
CEO
CBO
, T
EBO
T
I
qJA
C
D
L
stg
−65 to 150
Value
Max
83.3
260
5.0
1.0
1.5
20
25
12
10
1
mW/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Sec
°C
°C
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
BCP68T1
BCP68T1G
BCP68T3
BCP68T3G
MEDIUM POWER NPN SILICON
1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
HIGH CURRENT TRANSISTOR
Device
2
(Note: Microdot may be in either location)
3
ORDERING INFORMATION
CA = Specific Device Code
A
Y
W
G
SURFACE MOUNT
BASE
4
COLLECTOR 2,4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
1
(Pb−Free)
(Pb−Free)
SOT−223
SOT−223
SOT−223
SOT−223
Package
CASE 318E
SOT−223
STYLE 1
EMITTER 3
1000/Tape & Reel
1000/Tape & Reel
4000/Tape & Reel
4000/Tape & Reel
Shipping
MARKING
DIAGRAM
AYW
CA G
G
†