NJT4030PT1G ON Semiconductor, NJT4030PT1G Datasheet - Page 4

• Manufacturer Part Number: NJT4030PT1G
• Description: TRANS PNP BIPO 3A 40V SOT-223
• Manufacturer: ON Semiconductor

Specifications of NJT4030PT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 1V
• Power - Max: 2W
• Frequency - Transition: 160MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200
• Gain Bandwidth Product Ft: 160 MHz
• Maximum Operating Frequency: 110 MHz
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NJT4030PT1GOSTR

Final Product/Process Change Notification #16003
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Issue Date: 02-Apr-2007
Rev.07-02-06
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