NSS1C200MZ4T1G ON Semiconductor, NSS1C200MZ4T1G Datasheet - Page 2

• Manufacturer Part Number: NSS1C200MZ4T1G
• Description: TRANS PNP 100V 2A SOT223
• Manufacturer: ON Semiconductor

Specifications of NSS1C200MZ4T1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 220mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NSS1C200MZ4T1GOSTR

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
Emitter Cutoff Current (V
DC Current Gain (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage (Note 3)
Base −Emitter Turn−on Voltage (Note 3)
Cutoff Frequency
Input Capacitance (V
Output Capacitance (V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
C
C
= −10 mA, V
= −500 mA, V
= −1.0 A, V
= −2.0 A, V
= −0.1 A, I
= −0.5 A, I
= −1.0 A, I
= −2.0 A, I
= −1.0 A, I
= −1.0 A, V
= −100 mA, V
B
B
B
B
B
CE
CE
CE
= −0.010 A)
= −0.050 A)
= −0.100 A)
= −0.200 A)
= −0.100 A)
CE
CE
CE
= −2.0 V)
= −2.0 V)
= −2.0 V)
EB
= −2.0 V)
= −2.0 V)
= −5.0 V, f = 100 MHz)
CB
= 3.0 V, f = 1.0 MHz)
EB
= 10 V, f = 1.0 MHz)
CB
Characteristic
= −6.0 Vdc)
= −140 Vdc, I
2.5
2.0
1.5
1.0
0.5
0
E
25
C
= −0.1 mAdc, I
C
= −0.1 mAdc, I
(T
= −10 mAdc, I
A
E
= 25°C unless otherwise noted)
= 0)
TYPICAL CHARACTERISTICS
50
T
T
A
C
Figure 1. Power Derating
C
E
= 0)
T, TEMPERATURE (°C)
B
= 0)
http://onsemi.com
= 0)
75
2
100
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
BE(sat)
Cibo
BE(on)
h
CBO
EBO
f
FE
T
125
−100
−140
−7.0
Min
150
120
80
50
150
Typ
120
200
22
−0.040
−0.080
−0.125
−0.220
−0.950
−0.850
−100
Max
−50
360
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
pF
pF
V
V
V