STN951 STMicroelectronics, STN951 Datasheet - Page 4

• Manufacturer Part Number: STN951
• Description: TRANS PNP LV FAST SW SOT-223
• Manufacturer: STMicroelectronics

Specifications of STN951

• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 1V
• Power - Max: 1.6W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 1600 mW
• Maximum Operating Frequency: 130 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 150 at 10 mA at 1 V
• Minimum Operating Temperature: - 65 C
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 1.6W
• Dc Collector Current: 5A
• Dc Current Gain Hfe: 300
• Transistor Case Style: SOT-223
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7496-2; STN951

Electrical characteristics
2
4/8
(T
Table 4.
1. Pulse duration = 300 µs, duty cycle ≤ 2 %
V
V
Electrical characteristics
V
V
V
V
case
(BR)CBO
(BR)CEO
(BR)EBO
Symbol
CE(sat)
BE(sat)
BE(on)
h
C
I
I
FE
CBO
EBO
t
CBO
f
t
on
t
T
s
f
= 25 °C unless otherwise specified)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-base
Breakdown voltage
(I
Collector-emitter
Breakdown voltage
(I
Emitter-base Breakdown
voltage (I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Base-emitter on voltage
DC current gain
Transition frequency
Collector-base
capacitance (I
Resistive load
Turn-on time
Storage time
Fall time
E
C
E
B
=0)
=0)
=0)
=0)
Parameter
C
=0)
E
=0)
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
B1 =
CB
EB
CE
CB
= -100 µA
= -10 mA
= -100 µA
= -100 mA I
= -1 A
= -2 A
= -5 A
= -4 A
= -4 A
= -10 mA
= -2 A
= -5 A
= -10 A
= -1 A
= -5 V
= -60 V
= -10 V
= -10 V
- I
Test conditions
B2
= -0.1 A
I
I
I
I
B
B
B
B
I
C
B
V
V
V
V
V
f = 1 MHz
V
= -5 mA
= -50 mA
= -50 mA
= -200 mA
= -100 mA
CE
CE
CE
CE
CE
= -200 mA
CC
= -1 V
= -1 V
= -1 V
= -1 V
= -1 V
= -30 V
Min.
150
150
-60
-60
65
10
-6
-0.89
Typ.
-140
-350
300
270
130
600
-10
-70
90
25
60
80
70
-1
-1.15
Max.
-120
-250
-500
-0.1
-0.1
350
-50
-1
STN951
MHz
Unit
mV
mV
mV
mV
µA
µA
pF
ns
ns
ns
V
V
V
V
V