MAX2411AEEI+ Maxim Integrated Products, MAX2411AEEI+ Datasheet - Page 2
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MAX2411AEEI+
Manufacturer Part Number
MAX2411AEEI+
Description
RF Wireless Misc IC UP/DOWNCONVERTER erter, Upconverter,
Manufacturer
Maxim Integrated Products
Datasheet
1.MAX2411AEEI.pdf
(14 pages)
Specifications of MAX2411AEEI+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
V
LNAIN Input Power ...........................................................15dBm
LO, LO Input Power ..........................................................10dBm
PADRIN Input Power.........................................................10dBm
RXMXIN Input Power ........................................................10dBm
IF, IF Input Power (transmit mode) ...................................10dBm
Voltage at RXEN, TXEN, GC.......................-0.3V to (V
DC ELECTRICAL CHARACTERISTICS
(V
with 50Ω resistor, TXMXOUT pulled up to V
T
Low-Cost RF Up/Downconverter
with LNA and PA Driver
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
AC ELECTRICAL CHARACTERISTICS
(MAX2411A EV kit, V
f
f
2
IF, IF
LO
Supply-Voltage Range
Digital Input Voltage High
Digital Input Voltage Low
RXEN Input Bias Current (Note 1)
TXEN Input Bias Current (Note 1)
GC Input Bias Current
Supply Current, Receive Mode
Supply Current, Transmit Mode
Supply Current, Standby Mode
Supply Current, Shutdown Mode
Gain (Note 2)
Noise Figure
Input IP3
Output 1dB Compression
LO to LNAIN Leakage
Conversion Gain (Note 2)
Noise Figure
Input IP3
Input 1dB Compression
IF Frequency
Minimum LO Drive Level
A
LOW-NOISE AMPLIFIER (RXEN = high)
RECEIVE MIXER (RXEN = high)
CC
CC
= -40°C to +85°C. Typical values are at +25°C and V
_______________________________________________________________________________________
= 1.5GHz, P
to GND ................................................................-0.3V to 6V
= +2.7V to +5.5V, V
= 400MHz, P
PARAMETER
PARAMETER
LO
IF
= -32dBm (Note 1), T
= -10dBm, f
CC
GC
= +3.0V, V
= +3.0V, RXEN = TXEN = 0.6V, PADROUT pulled up to V
LNAIN
GC
RXEN, TXEN pins
RXEN, TXEN pins
RXEN = 2.0V
TXEN = 2.0V
GC = 3V, TXEN = 2V
RXEN = 2.0V
TXEN = 2.0V
RXEN = 2.0V, TXEN = 2.0V
V
T
T
(Note 3)
RXEN = high or low
T
T
Single sideband
(Note 4)
(Notes 2, 5)
(Note 6)
A
A
A
A
CC
A
= f
= +2.15V, RXEN = TXEN = low, all measurements performed in 50Ω environment,
= +25°C
= T
= +25°C
= -40°C to +85°C
CC
= +25°C, unless otherwise noted.)
= 3.0V
PADRIN
MIN
with 125Ω resistor, LNAOUT pulled up to V
to T
CC
= f
MAX
+ 0.3V)
CC
RXMXIN
= +3.0V, unless otherwise noted.)
CONDITIONS
CONDITIONS
= 1.9GHz, P
Continuous Power Dissipation (T
Junction Temperature ......................................................+150°C
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature.........................................-65°C to +165°C
Lead Temperature (soldering, 10sec) .............................+300°C
QSOP (derate 11mW/°C above +70°C) ........................909mW
LNAIN
= -32dBm, P
CC
CC
with 50Ω resistor; IF,
with 100Ω resistor, all RF inputs open,
14.2
12.6
MIN
MIN
2.7
2.0
8.5
7.5
PADRIN
A
= +70°C)
TYP
TYP
16.2
-7.7
160
-10
-49
-17
0.1
0.1
0.1
2.4
9.4
9.2
4.0
35
20
30
-5
= P
RXMXIN
IF pulled up to V
MAX
MAX
51.1
29.6
44.7
17.4
19.1
10.0
10.9
520
450
5.5
0.6
10
1
1
= -22dBm,
UNITS
UNITS
dBm
dBm
dBm
dBm
dBm
MHz
dBm
mA
mA
µA
µA
µA
µA
µA
dB
dB
dB
dB
V
V
V
CC