MJ11033G ON Semiconductor, MJ11033G Datasheet - Page 3

• Manufacturer Part Number: MJ11033G
• Description: TRANS DARL PNP 50A 120V TO3
• Manufacturer: ON Semiconductor
• Type: High Current, Powerr

Specifications of MJ11033G

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 50A
• Voltage - Collector Emitter Breakdown (max): 120V
• Vce Saturation (max) @ Ib, Ic: 3.5V @ 500mA, 50A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 25A, 5V
• Power - Max: 300W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 120 V
• Maximum Dc Collector Current: 50 A
• Power Dissipation: 0.3 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 50 A
• Dc Collector/base Gain Hfe Min: 400, 1000
• Minimum Operating Temperature: - 55 C
• Current, Gain: 400
• Current, Input: 2 A
• Current, Output: 50 A
• Current, Output, Leakage: 2
• Package Type: TO-204 (TO-3)
• Polarity: PNP
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 3.5 V
• Voltage, Input: 5 V
• Voltage, Output: 120 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJ11033GOS

ORDERING INFORMATION
MJ11028
MJ11028G
MJ11029
MJ11029G
MJ11030
MJ11030G
MJ11032
MJ11032G
MJ11033
MJ11033G
100
0.5
0.2
0.1
50
20
10
100 k
5
2
1
50 k
20 k
10 k
500
200
100
0.2
5 k
2 k
1 k
1
MJ11028, MJ11030, MJ11032 NPN
0.5
V
T
CE
J
V
Figure 2. DC Safe Operating Area
= 25°C
CE
= 5 V
2
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
SECOND BREAKDOWN LIMITED
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
MJ11029, MJ11033 PNP
Device
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
2
5
5
MJ11028, 29
MJ11032, 33
10
10
C
= 25°C
20
20
80 ms
(PULSED)
50
100
50
http://onsemi.com
200
100
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−204
TO−204
TO−204
TO−204
TO−204
TO−204
TO−204
TO−204
TO−204
TO−204
3
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
There are two limitations on the power−handling ability
The data of Figure 2 is based on T
5
4
3
2
1
0
1
MJ11028, MJ11030, MJ11032 NPN
T
I
C
J
/I
= 25°C
B
V
2
= 100
CE(sat)
MJ11029, MJ11033 PNP
3
I
C
Figure 4. “On” Voltage
, COLLECTOR CURRENT (AMP)
5
10
V
100 Units / Tray
BE(sat)
Shipping
20
J(pk)
= 200_C; T
50
80 ms
(PULSED)
C
− V
C
100
CE
is