TGA2525 TriQuint, TGA2525 Datasheet

no-image

TGA2525

Manufacturer Part Number
TGA2525
Description
RF Amplifier 2-18GHz LNA / Gain Block w/AGC
Manufacturer
TriQuint
Datasheet

Specifications of TGA2525

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1062622

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGA2525
Manufacturer:
QORVO
Quantity:
300
Part Number:
TGA2525-SM-T/R
Manufacturer:
RENESAS
Quantity:
11 460
10
-10
-15
-20
-25
-30
-35
25
20
15
10
9
8
7
6
5
4
3
2
1
0
-5
Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V,
5
0
Measured Performance
2
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
4
2-18 GHz Low Noise Amplifier with AGC
6
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Vg2 = +1.3 V
Frequency (GHz)
Frequency (GHz)
8
10
12
Typical
NF
Gain
14
Gain
IRL
ORL
16
18
20
18
16
14
12
10
8
6
4
2
0
Mar 2008 © Rev A
Key Features
Product Description
Primary Applications
The TriQuint TGA2525 is a compact LNA Gain
Block MMIC with adjustable gain control (AGC).
The LNA operates from 2-18 GHz and is designed
using TriQuint’s proven standard 0.15 um Power
pHEMT production process.
The TGA2525 provides a nominal 18 dBm of
output power at 1 dB gain compression with a
small signal gain of 17 dB. Greater than 30 dB
adjustable gain can be achieved using Vg2 pin.
Typical noise figure is 2 dB at 8 GHz. Special
circuitry on both Vg1 and Vg2 pins provides ESD
protection.
The TGA2525 is suitable for a variety of wideband
systems such as point to point radios, radar
warning receivers and electronic counter
measures.
The TGA2525 is 100% DC and RF tested on-wafer
to ensure performance compliance. The TGA2525
has a protective surface passivation layer providing
environmental robustness.
Lead-Free & RoHS compliant.
Evaluation Boards are available upon request.
Frequency Range: 2 - 18 GHz
Midband NF: 2 dB
Gain: 17 dB
>30 dB adjustable gain with Vg2
TOI: 29 dBm Typical
22 dBm Nominal Psat, 18 dBm Nominal P1dB
ESD Protection circuitry on Vg1 & Vg2
Bias: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2
= +1.3 V, Typical
Technology: 3MI 0.15 um Power pHEMT
Chip Dimensions: 2.09 x 1.35 x 0.1 mm
Wideband Gain Block / LNA
X-Ku Point to Point Radio
Electronic Warfare Applications
Datasheet subject to change without notice.
TGA2525
1

Related parts for TGA2525

Related keywords