BC33716BU Fairchild Semiconductor, BC33716BU Datasheet
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BC33716BU
Specifications of BC33716BU
Related parts for BC33716BU
BC33716BU Summary of contents
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... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted BC337-16 / BC337-25 Value Units 5 ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Em itter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CES V Em itter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Em itter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...