KST2222AMTF Fairchild Semiconductor, KST2222AMTF Datasheet
KST2222AMTF
Manufacturer Part Number
KST2222AMTF
Description
TRANSISTOR NPN 40V 600MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.KST2222AMTF.pdf
(4 pages)
Specifications of KST2222AMTF
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KST2222AMTF
Manufacturer:
FAIRCHILD
Quantity:
27 000
Part Number:
KST2222AMTF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
KST2222A Rev. B
KST2222A
NPN Epitaxial Silicon Transistor
General Purpose Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V
V
V
I
P
T
BV
BV
BV
I
h
V
V
f
C
NF
t
t
Symbol
C
CBO
T
ON
OFF
Symbol
FE
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
(sat)
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
1. Base 2. Emitter 3. Collector
Parameter
Parameter
3
T
1
a
=25°C unless otherwise noted
SOT-23
T
a
= 25°C unless otherwise noted
2
I
I
I
V
V
V
V
V
V
I
I
I
I
I
V
I
R
V
V
V
I
C
C
E
C
C
C
C
C
C
B1
CB
CE
CE
CE
CE
CE
CB
S
CC
BE
CC
= 10µA, I
= 10µA, I
= 10mA, I
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 100µA, V
= 1KΩ, f = 1MHz
= I
= 0.5V, I
= 60V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 30V, I
= 30V, I
B2
Test Condition
= 15mA
1
E
C
B
E
C
C
C
C
C
E
C
C
B1
CE
= 0
= 0
B
B
B
B
CE
= 0
= 0
= 0.1mA
= 1mA
= 10mA
= 150mA
= 500mA
= 0, f = 1MHz
= 150mA,
= 150mA
= 15mA
= 50mA
= 15mA
= 50mA
= 15mA
= 20V, f = 100MHz
= 10V
Marking
-55 ~ 150
Value
600
350
75
40
6
1 P
Min.
100
300
0.6
75
40
35
50
75
40
6
Max.
0.01
300
285
0.3
1.0
1.2
2.0
35
8
4
May 2006
www.fairchildsemi.com
Units
Units
mW
MHz
mA
°C
µA
pF
dB
V
V
V
ns
ns
V
V
V
V
V
V
V
tm
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KST2222AMTF Summary of contents
Page 1
... Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure t Turn On Time ON t Turn Off Time OFF * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation KST2222A Rev. B Marking 2 SOT- 25°C unless otherwise noted a Value 75 40 600 350 ...
Page 2
Typical Performance Characteristics Figure 1. DC Current Gain lle c to ...
Page 3
Mechanical Dimensions ±0.03 0.40 2.90 ±0.03 0.95 KST2222A Rev. B SOT-23 ±0.03 0.40 0.96~1.14 ±0.10 ±0.03 0.95 ±0.03 1.90 0.508REF 3 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...