KSC1623YMTF Fairchild Semiconductor, KSC1623YMTF Datasheet
首页 Discrete Semiconductor Products Transistors (BJT) - Single KSC1623YMTF
Manufacturer Part Number
KSC1623YMTF
Description
TRANSISTOR NPN 50V 100MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of KSC1623YMTF
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
135 @ 1mA, 6V
Power - Max
200mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
©2002 Fairchild Semiconductor Corporation
Low Frequency Amplifier & High Frequency
OSC.
• Complement to KSA812
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
I
I
h
V
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
BE
ob
Symbol
(sat)
(on)
(sat)
Classification
Classification
h
FE
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
90 ~ 180
O
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
Marking
KSC1623
V
V
V
I
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
C1 O
=100mA, I
=100mA, I
135 ~ 270
=5V, I
=60V, I
=6V, I
=6V, I
=6V, I
=6V, I
Test Condition
Y
C
C
C
C
E
=0
=0, f=1MHz
E
=1mA
=1mA
=10mA
=0
B
B
=10mA
=10mA
h
FE
grade
200 ~ 400
1. Base 2. Emitter 3. Collector
Min.
0.55
G
90
3
-55 ~ 150
Ratings
100
200
150
60
50
5
Typ.
0.15
0.86
0.62
200
250
3
1
SOT-23
Max.
0.65
300 ~ 600
600
0.1
0.1
0.3
1.0
2
Rev. A2, September 2002
L
Units
mW
mA
V
V
V
C
C
Units
MHz
pF
V
V
V
A
A
Related parts for KSC1623YMTF
KSC1623YMTF Summary of contents
... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC1623 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V =60V =5V =6V, I ...
... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Charactersitic 1000 100 [mA], COLLECTOR CURRENT C Figure 3. DC current Gain 100 (V), COLLECTOR-BASE VOLTAGE CB Figure 5. Output Capacitance ©2002 Fairchild Semiconductor Corporation 100 250 200 150 100 0.1 0 Figure 2. Transfer Characteristic 1000 10 100 1000 1 Figure 4. Base-Emitter Saturation Voltage ...
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, September 2002 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...
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