MMBT5550 Fairchild Semiconductor, MMBT5550 Datasheet
MMBT5550
Manufacturer Part Number
MMBT5550
Description
TRANSISTOR NPN GP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT5550.pdf
(6 pages)
Specifications of MMBT5550
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
140V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
350mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
140V
Collector-base Voltage
160V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Dc Current Gain (min)
60
Frequency (max)
50MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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Part Number
Manufacturer
Quantity
Price
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©2005 Fairchild Semiconductor Corporation
MMBT5550 Rev. A
MMBT5550
NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
C
CBO
EBO
Symbol
J
FE
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
and gas discharge display drivers.
, T
Symbol
stg
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
Parameter
T
a
= 25°C unless otherwise noted
Parameter
T
1. Base 2. Emitter 3. Collector
a
= 25°C unless otherwise noted
3
I
I
I
V
V
V
I
I
I
I
I
I
I
- Continuous
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
= 10mA, I
= 1.0mA, I
= 100µA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 10mA, I
= 50mA, I
= 10mA, I
= 50mA, I
1
= 100V, I
= 100V, I
= 4.0V, I
SOT-23
Marking: 1F
Test Condition
1
2
C
B
B
B
B
C
B
E
CE
CE
E
E
CE
= 0
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 0
= 0
= 0
= 0
= 0, T
= 5.0V
= 5.0V
= 5.0V
a
= 100°C
-55 ~ +150
Value
140
160
600
6.0
Min.
140
160
6.0
60
60
20
Max.
0.15
0.25
100
100
250
1.0
1.2
50
www.fairchildsemi.com
Units
August 2005
mA
°C
V
V
V
Units
nA
µA
nA
V
V
V
V
V
V
V
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MMBT5550 Summary of contents
Page 1
... CBO I Emitter Cutoff Current EBO On Characteristics h DC Current Gain FE V Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter On Voltage BE(sat) ©2005 Fairchild Semiconductor Corporation MMBT5550 Rev SOT-23 1 Marking Base 2. Emitter 3. Collector T = 25°C unless otherwise noted a Parameter - Continuous T = 25°C unless otherwise noted a Test Condition ...
Page 2
... Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06." Package Marking and Ordering Information Device Marking Device 1F MMBT5550 MMBT5550 Rev 25°C unless otherwise noted a Test Condition I = 10mA 10V 100MHz V = 10V ...
Page 3
... C 0 0.6 0.4 0.2 0 COLLECTOR CURRENT (mA) C Figure 5. Collector Cutoff Current vs Ambient Temperature 100V AMBIE NT TEMP ERATURE ( C) A MMBT5550 Rev. A Figure 2. Collector-Emitter Saturation Voltage 0.5 0.4 0.3 0.2 0.1 0 100 1 Figure 4. Base-Emitter On Voltage 1.0 0.8 C 0.6 o 125 C 0.4 0.2 0.0 100 200 0 ...
Page 4
... Typical Performance Characteristics Figure 7. Power Dissipation vs Ambient Temperature 500 400 300 200 100 TEMPERATURE( MMBT5550 Rev. A (Continued) 100 125 150 www.fairchildsemi.com ...
Page 5
... Mechanical Dimensions MMBT5550 Rev. A SOT-23 5 Dimensions in Millimeters www.fairchildsemi.com ...
Page 6
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete MMBT5550 Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...