MMBT4403 Fairchild Semiconductor, MMBT4403 Datasheet - Page 2

• Manufacturer Part Number: MMBT4403
• Description: TRANSISTOR GP PNP AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT4403

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 350mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 100
• Power Dissipation: 350mW
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MMBT4403FSTR

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
C
h
h
h
h
t
t
t
t
Symbol
BEX
CEX
T
d
r
s
f
FE
ie
re
fe
oe
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
eb
Electrical Characteristics
*
Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
sat
sat
)
)
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
f = 140 kHz
V
f = 140 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
I
B1
B1
CE
CE
CB
BE
CC
CC
= 1.0 mA, I
= 0.1 mA, I
= 0.1 A, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 20 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= I
= 15 mA
= 35 V, V
= 35 V, V
= 10 V, I
= 0.5 V, I
= 30 V, I
= 30 V, I
Test Conditions
B2
= 15 mA
C
E
C
C
B
E
C
= 0
EB
BE
CE
CE
B
B
B
B
CE
CE
CE
CE
CE
CE
= 0,
= 150 mA,
= 150 mA
CE
CE
= 0
= 0
= 0,
PNP General Purpose Amplifier
= 15 mA
= 50 mA
= 15 mA*
= 50 mA
= 1.0 V
= 10 V,
= 0.4 V
= 0.4 V
= 1.0 V
= 1.0 V
= 10 V,
= 10 V,
= 10 V,
= 10 V,
= 2.0 V*
= 2.0 V*
Min
0.75
100
100
200
5.0
1.5
0.1
1.0
40
40
30
60
20
60
Max
225
0.75
0.95
300
500
100
0.1
0.1
0.4
1.3
8.5
8.0
30
20
30
15
15
(continued)
Units
x 10
MHz
mhos
ns
k
pF
pF
ns
ns
ns
V
V
V
V
V
V
V
A
A
-4