MMBT4124 Fairchild Semiconductor, MMBT4124 Datasheet
MMBT4124
Manufacturer Part Number
MMBT4124
Description
TRANSISTOR NPN 25V 200MA SOT23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT4124.pdf
(7 pages)
Specifications of MMBT4124
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 1V
Power - Max
350mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
25V
Collector-base Voltage(max)
30V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
120
Power Dissipation
350mW
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Minimum Operating Temperature
- 55 C
Collector-base Voltage
30V
Emitter-base Voltage
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MMBT4124FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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MMBT4124
Manufacturer:
FAIRCHILD/仙童
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20 000
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Part Number:
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Part Number:
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Part Number:
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Manufacturer:
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Company:
Part Number:
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Manufacturer:
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Company:
Part Number:
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Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT4124LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
Thermal Characteristics
NPN General Purpose Amplifier
Absolute Maximum Ratings*
JC
JA
, T
*
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B
E
2N4124
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
MMBT4124
SOT-23
Mark: ZC
2N4124
83.3
C
625
200
5.0
Max
-55 to +150
B
Value
*MMBT4124
200
5.0
25
30
350
357
2.8
E
2N4124/MMBT4124, Rev A
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C
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MMBT4124 Summary of contents
Page 1
... Fairchild Semiconductor Corporation MMBT4124 C TO-92 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N4124 625 5.0 83.3 200 E B Value Units 5.0 V 200 mA -55 to +150 C Max Units *MMBT4124 350 mW 2.8 mW/ C C/W 357 C/W 2N4124/MMBT4124, Rev A ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...
Page 3
Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 - 40 °C 100 0 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...
Page 4
Typical Characteristics Noise Figure vs Frequency 1 200 1 0 200 ...
Page 5
Typical Characteristics Storage Time vs Collector Current 500 T = 25°C J 100 T = 125° COLLECTOR CURRENT (mA) C Current Gain 500 100 10 0 COLLECTOR CURRENT (mA) C ...
Page 6
Test Circuits 300 ns Duty Cycle 0.5 V 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 500 Duty Cycle 9.1 V FIGURE 2: Storage and ...
Page 7
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...