MMBT4400 Fairchild Semiconductor, MMBT4400 Datasheet

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MMBT4400

Manufacturer Part Number
MMBT4400
Description
TRANSISTOR NPN GP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBT4400

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 150mA, 1V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT4400
Manufacturer:
VIA
Quantity:
100
Part Number:
MMBT4400
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
CEO
CBO
EBO
J
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings*
*
JC
JA
NPN General Purpose Amplifier
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
B
Derate above 25 C
E
2N4400
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
MMBT4400
SOT-23
Mark: 83
2N4400
83.3
625
200
5.0
C
Max
-55 to +150
B
Value
*MMBT4400
6.0
600
40
60
350
357
2.8
E
2N4400/MMBT4400, Rev A
Units
Units
mW/ C
mA
mW
C/W
C/W
V
V
V
C

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MMBT4400 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient JA 2001 Fairchild Semiconductor Corporation MMBT4400 TO-92 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N4400 83 Value Units 6.0 V 600 mA -55 to +150 C Max Units *MMBT4400 625 350 mW 5.0 2.8 mW/ C C/W 200 357 C/W 2N4400/MMBT4400, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CEX I Emitter Cutoff Current BL ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Turn On and Turn Off Times vs Collector Current 400 320 240 160 100 I - COLLECTOR CURRENT (mA) ...

Page 5

Typical Common Emitter Characteristics Common Emitter Characteristics COLLECTOR CURRENT ...

Page 6

Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Timer NOTE 5.0 V EBO 0 200ns FIGURE 2: Saturated Turn-Off Switching Time NPN General Purpose Amplifier 1.0 K 500 - 1 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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