MMBT2369 Fairchild Semiconductor, MMBT2369 Datasheet

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MMBT2369

Manufacturer Part Number
MMBT2369
Description
TRANSISTOR SWITCH NPN SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBT2369

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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MMBT2369 / PN2369 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
• Sourced from process 21.
Absolute Maximum Ratings *
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.
V
V
V
I
I
T
P
R
R
C
CP
J
CEO
CBO
EBO
D
θJC
θJA
collector currents of 10mA to 100mA.
, T
Symbol
Symbol
STG
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MMBT2369
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
**Collector Current (Pulse)
Operating and Storage Junction Temperature Range
C
B
T
a
Parameter
E
SOT-23
= 25°C unless otherwise noted
Mark: 1J
T
a
Parameter
= 25×C unless otherwise noted
- Continuous
1
1. Emitter 2. Base 3. Collector
PN2369
1
Max.
350
125
357
2.8
TO-92
Ratings
-55 ~ 150
200
400
4.5
15
40
mW/°C
Units
February 2008
www.fairchildsemi.com
°C/W
°C/W
mW
Units
mA
mA
°C
V
V
V

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MMBT2369 Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”. © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 PN2369 E SOT-23 1 Mark Emitter 2. Base 3. Collector T = 25×C unless otherwise noted ...

Page 2

... Small -Signal Current Gain fe Switching Characteristics t Storage Time s t Turn-On Time on t Turn-Off Time off * Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0% © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0 25°C unless otherwise noted a Test Condition I = 10mA 10μ ...

Page 3

... Package Dimensions ±0.03 0.40 0.95 © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 SOT-23 0.40 ±0.03 0.96~1.14 ±0.10 2.90 ±0.03 ±0.03 0.95 ±0.03 1.90 0.508REF 3 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters www.fairchildsemi.com ...

Page 4

... Package Dimensions (Continued) 0.46 ±0.10 1.27TYP ±0.20 [1.27 © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 ] [1.27 ] 3.60 ±0.20 (R2.29) 4 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ ...

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