MMBT4401 Fairchild Semiconductor, MMBT4401 Datasheet - Page 2

• Manufacturer Part Number: MMBT4401
• Description: TRANSISTOR GP NPN AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT4401

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 100
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT4401FSTR

V
V
V
I
I
h
V
V
f
C
C
h
h
h
h
t
t
t
t
ON CHARACTERISTICS*
Symbol
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
BL
CEX
T
d
r
s
f
FE
ie
re
fe
oe
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
eb
*
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
f = 140 kHz
V
f = 140 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
BE
CC
CC
= 1.0 mA, I
= 0.1 mA, I
= 0.1 mA, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 20 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 150 mA, I
= I
= 35 V, V
= 35 V, V
= 5.0 V, I
= 0.5 V, I
= 30 V, V
= 30 V, I
Test Conditions
B2
= 15 mA
C
C
B
E
E
C
EB
EB
CE
CE
EB
B
B
B
B
B1
CE
CE
CE
CE
CE
CE
= 150 mA
= 0
= 0
CE
CE
= 0,
= 0,
= 0
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 0.4 V
= 0.4 V
= 1.0 V
= 10 V,
= 2 V,
= 15 mA
NPN General Purpose Amplifier
= 1.0 V
= 1.0 V
= 10 V,
= 10 V,
= 10 V,
= 10 V,
= 1.0 V
= 2.0 V
Min
0.75
100
250
6.0
1.0
0.1
1.0
40
60
20
40
80
40
40
Max
0.75
0.95
300
500
225
0.1
0.1
0.4
1.2
6.5
8.0
30
15
30
15
20
30
(continued)
Units
x 10
MHz
mhos
k
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
A
A
-4
3