SS8050DTA Fairchild Semiconductor, SS8050DTA Datasheet - Page 2

• Manufacturer Part Number: SS8050DTA
• Description: TRANSISTOR NPN 25V 1.5A TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of SS8050DTA

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 80mA, 800mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 1.5 A
• Maximum Dc Collector Current: 1.5 A
• Power Dissipation: 1 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 85
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2010 Fairchild Semiconductor Corporation
SS8050 Rev. B3
Typical Performance Characteristics
Figure 3. Base-Emitter Saturation Voltage
10000
1000
Figure 5. Collector Output Capacitance
1000
100
100
10
10
0.5
0.4
0.3
0.2
0.1
1
0.1
1
0
Collector-Emitter Saturation Voltage
Figure 1. Static Characteristic
V
CB
V
CE
0.4
I
[V], COLLECTOR-BASE VOLTAGE
C
[V], COLLECTOR-EMITTER VOLTAGE
[mA], COLLECTOR CURRENT
1
V
V
BE
CE
(sat)
(sat)
0.8
10
10
1.2
I
I
I
I
I
I
100
B
B
B
B
B
B
= 2.5mA
= 2.0mA
= 1.5mA
= 1.0mA
= 3.0mA
= 0.5mA
I
f = 1MHz
1.6
E
I
C
= 0
= 10 I
B
1000
100
2.0
2
Figure 6. Current Gain Bandwidth Product
1000
1000
100
100
10
100
0.1
10
10
1
1
0.1
1
0.0
Figure 4. Base-Emitter On Voltage
1
Figure 2. DC current Gain
0.2
V
I
C
I
BE
C
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
1
[V], BASE-EMITTER VOLTAGE
0.4
10
10
0.6
0.8
100
100
V
V
CE
V
1.0
CE
CE
= 10V
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= 1V
= 1V
1000
400
1.2