BC80816MTF Fairchild Semiconductor, BC80816MTF Datasheet - Page 3

• Manufacturer Part Number: BC80816MTF
• Description: TRANSISTOR PNP 25V 800MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BC80816MTF

• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 310mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1000
100
-1000
10
-500
-400
-300
-200
-100
-100
1
-0.1
-0.1
-10
-0
-1
-0.4
-0
Figure 5. Base-Emitter On Voltage
Figure 1. Static Characteristic
Figure 3. DC current Gain
V
PULSE
CE
V
I
= -1V
CE
-0.5
C
-1
[mA], COLLECTOR CURRENT
-1
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
-0.6
I
I
-2
B
B
= - 1.0mA
= - 0.5mA
-10
I
B
= 0
-0.7
-3
-100
- 1.0V
V
CE
-0.8
-4
= - 2.0V
PULSE
-1000
-0.9
-5
Figure 4. Base-Emitter Saturation Voltage
100
-0.01
-20
-16
-12
10
-8
-4
-0
-0.1
1
-10
-0.1
-1
-0
Collector-Emitter Saturation Voltage
-0.1
Figure 6. Input Output Capacitance
Figure 2. Static Characteristic
V
CB
V
V
-10
CE
[V], COLLECTOR-BASE VOLTAGE
EB
[V], COLLECTOR-EMITTER VOLTAGE
I
[V], EMITTER-BASE VOLTAGE
C
[mA], COLLECTOR CURRENT
-1
-1
V
-20
BE
(sat)
C
-10
ib
V
CE
-30
(sat)
-10
I
B
= 0
-100
C
ob
f = 1.0MHz
-40
I
PULSE
C
= 10 I
B
Rev. A2, August 2002
-100
-1000
-50