BC847C-7-F Diodes Inc, BC847C-7-F Datasheet - Page 2
![TRANS NPN BIPOLAR 45V SOT23-3](/photos/1/37/13783/sot23_sml.jpg)
BC847C-7-F
Manufacturer Part Number
BC847C-7-F
Description
TRANS NPN BIPOLAR 45V SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.BC846A-7-F.pdf
(4 pages)
Specifications of BC847C-7-F
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Current - Collector Cutoff (max)
15nA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
300 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Minimum Operating Temperature
- 65 C
Collector Emitter Voltage V(br)ceo
45V
Transition Frequency Typ Ft
300MHz
Power Dissipation Pd
300mW
Dc Collector Current
100mA
Dc Current Gain Hfe
600
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BC847C-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC847C-7-F
Manufacturer:
Diodes Inc.
Quantity:
28 379
Company:
Part Number:
BC847C-7-F
Manufacturer:
TI
Quantity:
568
Electrical Characteristics
Collector-Base Breakdown Voltage (Note 5)
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
(Note 3)
H-Parameters
Small Signal Current Gain
Input Impedance
Output Admittance
Reverse Voltage Transfer Ratio
Current Gain Group
DC Current Gain
Collector-Emitter Saturation Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Voltage (Note 5)
Collector-Cutoff Current (Note 5)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
DS11108 Rev. 22 - 2
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
Current Gain Group A
Current Gain Group A
Current Gain Group A
Current Gain Group A
@T
(Note 5)
BC846, BC847
A
= 25°C unless otherwise specified
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
BC848
C
C
C
C
C
B
B
B
A
B
B
Symbol
V
V
V
V
V
V
www.diodes.com
C
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
I
I
I
BE(ON)
h
h
h
h
NF
h
h
h
h
h
h
CBO
CBO
h
h
h
CES
CES
CES
f
CBO
oe
oe
oe
FE
re
re
re
T
fe
fe
fe
ie
ie
ie
2 of 4
Min
110
200
420
580
100
80
50
30
65
45
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
5
1.5x10
2x10
3x10
Typ
220
330
600
180
290
520
200
700
900
660
300
2.7
4.5
8.7
3.0
18
30
60
90
—
—
—
—
—
—
—
—
—
—
—
—
—
2
-4
-4
-4
Max
220
450
800
250
600
700
770
5.0
15
15
15
15
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MHz
Unit
mV
mV
mV
kΩ
kΩ
kΩ
µS
µS
µS
nA
nA
nA
nA
µA
dB
pF
—
—
—
—
—
—
—
V
V
V
I
I
I
V
f = 1.0kHz
V
I
I
I
I
V
V
V
V
V
V
V
V
f = 100MHz
V
V
R
f = 1.0kHz, Δf = 200Hz
C
C
E
C
C
C
C
CE
CE
CE
CE
CE
CE
CE
CB
CB
CE
CB
CE
S
= 1μA, I
= 10μA, I
= 10mA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= 2.0kΩ,
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 80V
= 50V
= 30V
= 40V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
= 5V, I
Test Condition
C
BC846A-BC848C
C
© Diodes Incorporated
B
= 0
B
B
B
= 200µA,
C
C
C
C
A
C
= 0
B
B
= 0
= 0.5mA
= 0.5mA
= 2.0mA,
= 2.0mA
= 2.0mA
= 10mA
= 150°C
= 10mA,
= 5.0mA
= 5.0mA