BC858B-7-F Diodes Inc, BC858B-7-F Datasheet - Page 3
![TRANS BIPO PNP SGL 300MW SOT23-3](/photos/1/37/13783/sot23_sml.jpg)
BC858B-7-F
Manufacturer Part Number
BC858B-7-F
Description
TRANS BIPO PNP SGL 300MW SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.BC856A-7-F.pdf
(4 pages)
Specifications of BC858B-7-F
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (max)
15nA
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-30V
Transition Frequency Typ Ft
200MHz
Power Dissipation Pd
300mW
Dc Collector Current
-100mA
Dc Current Gain Hfe
330
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC858B-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
DS11207 Rev. 19 - 2
0.4
0.3
0.5
0.2
250
350
300
200
150
0.1
100
50
0
0
0.1
0
Fig. 3, DC Current Gain vs. Collector Current
25
T , AMBIENT TEMPERATURE (°C)
I , COLLECTOR CURRENT (mA)
A
Fig. 1, Max Power Dissipation vs
C
50
Ambient Temperature
1.0
75
100 125
10
150
175
200
100
www.diodes.com
3 of 4
1000
100
10
0.5
0.4
0.3
0.2
0.1
0
Fig. 4, Gain Bandwidth Product vs Collector Current
0.1
1
V
CE
Fig. 2 Collector Emitter Saturation Voltage
I
I
C
B
= 10
= 5V
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
T = 150°C
1
A
vs. Collector Current
T = 25°C
A
10
10
100
T = -50°C
A
BC856A-BC858C
© Diodes Incorporated
1000
100