MMBT5551 Fairchild Semiconductor, MMBT5551 Datasheet - Page 3

• Manufacturer Part Number: MMBT5551
• Description: TRANSISTOR NPN 160V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5551

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 160V
• Collector-base Voltage: 180V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 80
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5551FSTR

2N5551 / MMBT5551 Rev. B1
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 3. Base-Emitter Saturation Voltage
50
10
Figure 1. Typical Pulsed Current Gain
1
250
200
150
100
25
1.0
0.8
0.6
0.4
0.2
50
Figure 5. Collector Cutoff Current
0
1
1
V = 100V
75
-40
CB
o
25
C
o
-40
C
o
C
T - AMBIE NT TEMP ERATURE ( C)
I
o
I
A
C
C
C
- COLLECTOR CURRENT [mA]
- COLLECTOR CURRENT [mA]
50
25
vs Ambient Temperature
o
C
vs Collector Current
vs Collector Current
10
125
75
10
o
C
o
C
100
75
o
C
100
o
100
C
125
100
100
o
C
V
°
CE
=5V
1000
125
3
Figure 2. Collector-Emitter Saturation Voltage
Figure 6. Input and Output Capacitance
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
10
Figure 4. Base-Emitter On Voltage
0.1
1
10
1
1
0
1
T
A
T
?
1
A
= 25
= 125
10
I
o
C
C
I
2
- COLLECTOR CURRENT [mA]
REVERSE BIAS VOLTAGE [V]
C
o
- COLLECTOR CURRENT [mA]
C
-40
T
o
3
vs Collector Current
vs Collector Current
A
C
10
vs Reverse Voltage
100
= -40
o
4
C
T
10
o
25
A
C
C
= 100
o
IB
C
5
125
o
C
o
C
75
6
o
100
C
T
A
7
= 75
C
OB
o
C
8
100
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9
1000
10