FJX945GTF Fairchild Semiconductor, FJX945GTF Datasheet - Page 2

• Manufacturer Part Number: FJX945GTF
• Description: TRANSISTOR NPN 50V 150MA SOT-323
• Manufacturer: Fairchild Semiconductor

Specifications of FJX945GTF

• Transistor Type: NPN
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1000
100
0.1
100
10
100
10
1
80
60
40
20
0
Figure 5. Collector Output Capacitance
1
1
0
Figure 1. Static Characteristic
2
V
Figure 3. DC current Gain
V
CB
CE
4
I
[V], COLLECTOR-BASE VOLTAGE
[V], COLLECTOR-EMITTER VOLTAGE
C
I
[mA], COLLECTOR CURRENT
B
= 400 A
6
10
10
8
I
B
= 350 A
10
I
B
= 300 A
12
100
100
I
B
14
= 250 A
I
B
I
B
I
= 200 A
B
= 150 A
16
= 100 A
I
I
f = 1MHz
B
E
V
= 50 A
= 0
CE
= 6V
18
1000
1000
20
Figure 4. Collector-Emitter Saturation Voltage
1000
100
100
0.01
Figure 6. Current Gain Bandwidth Product
0.1
10
10
0.1
10
1
1
1
0.1
0.0
1
Figure 2. Transfer Characteristic
Base-Emitter Saturation Voltage
0.2
V
V
I
CE
C
BE
I
[mA], COLLECTOR CURRENT
C
(sat)
[V], BASE-EMITTER VOLTAGE
[mA], COLLECTOR CURRENT
0.4
1
V
10
BE
(sat)
0.6
10
0.8
100
V
1.0
CE
V
I
C
CE
= 6V
= 10 I
= 6V
Rev. B2, April 2004
B
100
1000
1.2