MMBT3646 Fairchild Semiconductor, MMBT3646 Datasheet - Page 2

• Manufacturer Part Number: MMBT3646
• Description: TRANSISTOR SWITCHING NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT3646

• Transistor Type: NPN
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 30mA, 300mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 30mA, 400mV
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.3 A
• Maximum Dc Collector Current: 0.3 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics
Thermal Characteristics
Small-Signal Characteristics
C
C
Switching Characteristics
t
t
t
t
t
t
R
R
on
d
r
off
f
s
obo
ibo
JA
JC
Symbol
Symbol
Output Capacitance
(V
Input Capacitance
(V
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Fall Time
Storge Time
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
CE
EB
= 0.5Vdc, I
= 5Vdc, I
E
C
= 0, f = 1MHz)
= 0, f = 1MHz)
T
C
=25 C unless otherwise noted) (Continued)
Parameter
Parameter
V
I
V
I
B1
B1
CC
CC
= 30mAdc, V
= I
= 10Vdc, I
= 10Vdc, I
B2
= 30mAdc
C
C
CE(off)
= 300mAdc,
= 300mAdc,
= 3V
Min.
Min.
Typ.
Typ.
Max.
83.3
200
Max.
Rev. A1, November 2002
18
10
15
28
15
20
5
8
Units
Units
pF
pF
C
C
ns
ns
ns
ns
ns
ns