Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
DS30054 Rev. 11 - 2
Epitaxial Planar Die Construction
Complementary NPN Types Available (MMBTA05 /
MMBTA06)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020d
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
MMBTA55 Marking (See Page 3): K2H, K2G
MMBTA56 Marking (See Page 3): K2G
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
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E
V
V
V
Symbol
V
V
B
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
h
CBO
CEX
TOP VIEW
f
FE
T
Symbol
1 of 3
T
V
V
j
V
C
G
H
R
, T
B
P
CBO
CEO
EBO
I
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
θ JA
C
D
d
STG
A
E
C
J
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MMBTA55 / MMBTA56
Min
-4.0
100
-60
-80
-60
-80
2
B C
⎯
⎯
⎯
⎯
50
O
K
E
3
Fire Retardants.
L
MMBTA55
-0.25
Max
-100
-100
-1.2
⎯
⎯
⎯
⎯
⎯
-60
-60
M
-55 to +150
MHz
-500
Unit
-4.0
300
417
nA
nA
⎯
V
V
V
V
V
MMBTA56
I
I
I
V
V
V
V
I
I
I
I
V
f = 100MHz
C
C
E
C
C
C
C
CB
CB
CE
CE
CE
-80
-80
= -100μA, I
= -100mA, I
= -100μA, I
= -1.0mA, I
= -10mA, V
= -100mA, V
= -100mA, V
Dim
= -60V, I
= -80V, I
All Dimensions in mm
= -60V, I
= -80V, I
= -1.0V, I
M
A
B
C
D
E
G
H
K
J
L
α
Test Condition
MMBTA55 / MMBTA56
SOT-23
E
E
BO
BO
0.013
0.903
0.085
E
B
C
C
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
B
Min
CE
= 0
= 0
0°
CE
CE
= 0
= 0
= 0
= -100mA,
= -10mA
= 0V
= 0V
© Diodes Incorporated
= -1.0V
= -1.0V
= -1.0V
°C/W
Unit
mW
mA
°C
V
V
V
0.180
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
8°