KSD1616AGBU Fairchild Semiconductor, KSD1616AGBU Datasheet - Page 4

• Manufacturer Part Number: KSD1616AGBU
• Description: TRANSISTOR NPN 60V 1A TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of KSD1616AGBU

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 100mA, 2V
• Power - Max: 750mW
• Frequency - Transition: 160MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 0.75 W
• Maximum Operating Frequency: 160 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 135
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

KSD1616/1616A Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
Typical Characteristics(Continued)
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Figure 7. Current Gain Bandwidth Product
100
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0.01
0
25
Figure 9. Power Derating
I
C
[A], COLLECTOR CURRENT
T
50
a
[
o
C], AMBIENT TEMPERATURE
0.1
75
100
125
1
150
V
CE
175
= 2V
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200
4
0.01
0.1
10
1
1
Figure 8. Safe Operating Area
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
10
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100