BCV27 Fairchild Semiconductor, BCV27 Datasheet - Page 2

• Manufacturer Part Number: BCV27
• Description: TRANS DARL NPN 500MA 30V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BCV27

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 4000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BCV27TR

h
V
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
f
C
FE
Symbol
CE(
BE(
CBO
EBO
T
(BR)CEO
(BR)CBO
(BR)EBO
C
Electrical Characteristics
Typical Characteristics
sat
sat
)
)
250
200
150
100
1.6
1.2
0.8
0.4
50
0.001
0
2
0
1
V = 5V
Typical Pulsed Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Voltage vs Collect or Current
CE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Current Gain - Bandwidth Product
Collector Capacitance
= 1000
Base-Emitter Saturation
- 40 °C
vs Collector Current
- 40 °C
I - COLLECTOR CURRE NT (mA)
I - COLLECTOR CURRENT (A)
C
C
0.01
10
Parameter
25 °C
25 °C
125 °C
125 °C
0.1
100
TA = 25°C unless otherwise noted
1000
I
I
I
I
I
1
C
C
C
C
C
I
I
I
V
V
I
f = 100 MHz
V
C
C
E
C
= 1.0 mA, V
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, I
CB
EB
CB
= 10 mA, I
= 10 A, I
= 100 nA, I
= 30 mA, V
= 30 V, I
= 10 V, I
= 30 V, I
Test Conditions
E
C
CE
B
E
E
B
B
1.6
1.2
0.8
0.4
C
CE
1.6
1.2
0.8
0.4
CE
= 0
CE
= 0
= 0
= 0
= 0, f = 1.0 MHz
= 0.1 mA
= 0.1 mA
0
2
0
= 0
= 5.0 V
= 5.0 V
1
1
= 5.0 V,
= 5.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
Base Emitter ON Voltage vs
- 40 °C
= 1000
- 40 °C
I - COLLECTOR CURRE NT (mA)
I - COLLECTOR CURRE NT (mA)
NPN Darlington Transistor
C
C
Collector Current
10
10
25 °C
25°C
10,000
20,000
4,000
Min
30
40
10
125 °C
Typ
100
220
100
3.5
V = 5V
125 °C
CE
Max Units
0.1
0.1
1.0
1.5
(continued)
1000
1000
MHz
pF
V
V
V
V
V
A
A