BC81740MTF Fairchild Semiconductor, BC81740MTF Datasheet - Page 3

• Manufacturer Part Number: BC81740MTF
• Description: IC TRANS NPN SS GP 1.5A SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BC81740MTF

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 310mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 310 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BC81740; BC81740MTFTR; BC81740TR; BC81740TR

BC817/BC818 Rev. B
Typical Performance Characteristics
Figure 5. Power Dissipation vs Ambient Temperature
600
500
400
300
200
100
0.4
0.3
0.2
0.1
0.0
0.4
0.3
0.2
0.1
0.0
0
Figure 3. Collector-Emitter Saturation Voltage
10
0
1
Ic=10Ib
-25
25
o
Figure 1. DC current Gain
C
Collector Current, [mA]
Collector Current, [mA]
25
10
50
Temperature, [
o
C
75
100
75
-25
o
C
o
C
O
25
C]
125
100
o
100
C
o
75
C
BC81725MTF
o
Vce=1V
C
125
125
o
C
1000
1000
150
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.2
1.0
0.8
0.6
0.4
10
1
Figure 4. Base-Emitter Saturation Voltage
Ic=10Ib
V
Figure 2. Base-Emitter On Voltage
CE
-25
= 1V
o
25
C
o
C
Collector Current, [mA]
25
Collector Current, [mA]
o
C
10
75
o
C
100
125
75
o
C
o
C
100
125
www.fairchildsemi.com
o
C
1000