MMBT5088 Fairchild Semiconductor, MMBT5088 Datasheet - Page 3

• Manufacturer Part Number: MMBT5088
• Description: TRANSISTOR GP NPN AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5088

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 100µA, 5V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5088TR

Typical Characteristics
1200
1000
0.8
0.6
0.4
0.2
800
600
400
200
1
0.1
0
0.01 0.03
Voltage vs Collector Current
Typical Pulsed Current Gain
Base-Emitter Saturation
vs Collector Current
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
0.1
125 °C
1
25 °C
0.3
- 40 °C
25 °C
1
- 40 °C
125 °C
0.1
10
3
1
25
10
V
10
V
CE
CB
vs Ambient Temperature
Collector-Cutoff Current
= 5.0 V
= 10
= 45V
T - AMBIE NT TEMP ERATURE ( C)
30
50
A
100
100
75
100
0.25
0.15
0.05
0.8
0.6
0.4
0.2
0.3
0.2
0.1
1
0.1
0.1
NPN General Purpose Amplifier
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
= 10
125
°
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
Collector Current
- 40 °C
150
1
1
25 °C
25 °C
125 °C
10
125 °C
V
10
CE
- 40 °C
= 5.0 V
(continued)
100
40