BCV26 Fairchild Semiconductor, BCV26 Datasheet - Page 2

• Manufacturer Part Number: BCV26
• Description: TRANS DARL PNP 30V 1.2A SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BCV26

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 1.5@0.1mA@100mAV
• Collector-emitter Saturation Voltage: 1@0.1mA@100mAV
• Collector Current (dc) (max): 1.2A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 4000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BCV26FS; BCV26FSTR

h
V
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
f
C
FE
Symbol
CE(
BE(
CBO
EBO
T
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
C
Electrical Characteristics
Typical Characteristics
sat
sat
)
)
50
40
30
20
10
0
0.01
Typical Pulsed Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Current Gain - Bandwidth Product
Collector Capacitance
CE
= 5V
- 40 °C
vs Collector Current
I - COLLECTOR CURRENT (A)
C
25 °C
Parameter
125 °C
0.1
TA = 25°C unless otherwise noted
I
I
I
I
I
C
C
C
C
C
I
I
I
V
V
I
f = 100 MHz
V
C
C
E
C
1
= 1.0 mA, V
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, I
CB
EB
CB
= 10 mA, I
= 10 A, I
= 100 nA, I
= 30 mA, V
= 30 V, I
= 10 V, I
= 30 V, I
Test Conditions
E
C
CE
B
E
E
B
B
1.6
1.2
0.8
0.4
C
CE
CE
= 0
CE
= 0
= 0
= 0
= 0, f = 1.0 MHz
0.001
= 0.1 mA
= 0.1 mA
0
= 0
= 5.0 V
= 5.0 V
= 5.0 V,
= 5.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
= 1000
- 40 °C
PNP Darlington Transistor
I - COLLECTOR CURRENT (A)
C
0.01
10,000
20,000
4,000
Min
25 °C
30
40
10
Typ
220
3.5
0.1
125 °C
Max Units
0.1
0.1
1.0
1.5
(continued)
MHz
pF
V
V
V
V
V
1
A
A