MMBT6427 Fairchild Semiconductor, MMBT6427 Datasheet - Page 2

• Manufacturer Part Number: MMBT6427
• Description: TRANSISTOR DARL NPN SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: NPNr

Specifications of MMBT6427

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14000 @ 500mA, 5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Package: 3SOT-23
• Configuration: Single
• Peak Dc Collector Current: 1.2 A
• Maximum Base Emitter Saturation Voltage: 2@0.5mA@500mA V
• Maximum Collector Emitter Saturation Voltage: 1.2@0.5mA@50mA|1.5@0.5mA@500mA V
• Maximum Collector Cut-off Current: 0.05 uA
• Maximum Collector Emitter Voltage: 40 V
• Minimum Dc Current Gain: 10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6427FSTR

h
V
V
V
SMALL SIGNAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
V
V
I
I
I
C
C
Symbol
CEO
CBO
EBO
FE
CE(
BE(
BE(
(BR)CEO
(BR)CBO
(BR)EBO
obo
ibo
Electrical Characteristics
*
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
on
)
)
)
DC Current Gain*
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Input Capcitance
Parameter
TA = 25°C unless otherwise noted
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
f = 1.0 MHz
C
C
C
C
C
C
C
C
C
E
f = 1.0 MHz
CE
CB
EB
CB
BE
= 10 mA, V
= 100 mA, V
= 500 mA, V
= 50 mA, I
= 500 mA, I
= 500 mA, I
= 50 mA, V
= 10 mA, I
= 100 A, I
= 10 A, I
= 25 V, I
= 30 V, I
= 10 V, I
= 10 V, I
= 1.0 V, I
Test Conditions
C
B
B
B
E
C
E
C
E
CE
CE
= 0
B
B
= 0.5 mA
= 0
= 0,
= 0
= 0
= 0
CE
CE
= 0,
= 0
= 0.5 mA
= 0.5 mA
= 5.0 V
= 5.0 mA
= 5.0 V
= 5.0 V
NPN Darlington Transistor
10,000
20,000
14,000
Min
40
40
12
100,000
200,000
140,000
Max
1.75
1.2
1.5
2.0
1.0
7.0
50
50
15
(continued)
Units
nA
nA
pF
pF
V
V
V
V
V
V
V
A
3