MMBT6427 Fairchild Semiconductor, MMBT6427 Datasheet - Page 3

• Manufacturer Part Number: MMBT6427
• Description: TRANSISTOR DARL NPN SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: NPNr

Specifications of MMBT6427

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14000 @ 500mA, 5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Package: 3SOT-23
• Configuration: Single
• Peak Dc Collector Current: 1.2 A
• Maximum Base Emitter Saturation Voltage: 2@0.5mA@500mA V
• Maximum Collector Emitter Saturation Voltage: 1.2@0.5mA@50mA|1.5@0.5mA@500mA V
• Maximum Collector Cut-off Current: 0.05 uA
• Maximum Collector Emitter Voltage: 40 V
• Minimum Dc Current Gain: 10000@10mA@5V|20000@100mA@5V|14000@500mA@5V
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6427FSTR

Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3