MPS6513 Fairchild Semiconductor, MPS6513 Datasheet

TRANSISTOR NPN GEN PURP TO-92

MPS6513

Manufacturer Part Number
MPS6513
Description
TRANSISTOR NPN GEN PURP TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MPS6513

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 2mA, 10V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
0.45 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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MPS6513 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
MPS6513
NPN General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
• Sourced from Proces 23.
Absolute Maximum Ratings
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
V
V
V
I
T
P
R
R
BV
BV
BV
I
h
V
C
C
Symbol
CBO
FE
J
CBO
CEO
EBO
D
CE
θJC
θJA
ob
, T
Symbol
CEO
EBO
CBO
(sat)
Symbol
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
Parameter
T
T
a
=25°C unless otherwise noted
C
=25°C unless otherwise noted
T
C
Parameter
=25°C unless otherwise noted
Parameter
I
I
I
V
V
V
I
V
C
C
E
C
CB
CE
CE
CB
= 0.5 mA
= 10 μA
= 50 mA, I
= 10 μA
= 30 V, T = 25 °C
= 10V, I
= 10V, I
= 5V, f = 1.0 MHz
Test Condition
1
T = 60 °C
C
C
B
= 2mA
= 100mA
= 5 mA
Min.
1. Emitter 2. Base 3. Collector
40
30
90
60
4
1
Max.
-55 ~ 150
83.3
625
200
Value
5.0
200
40
30
Typ.
4
TO-92
Max.
0.05
180
1.0
0.5
3.5
September 2007
www.fairchildsemi.com
Units
Units
mW/°C
°C/W
°C/W
mW
mA
°C
V
V
V
Units
μA
pF
V
V
V
V

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MPS6513 Summary of contents

Page 1

... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C. © 2007 Fairchild Semiconductor Corporation MPS6513 Rev. 1.0.0 T =25°C unless otherwise noted C ...

Page 2

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MPS6513 Rev. 1.0.0 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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