BCX19 Fairchild Semiconductor, BCX19 Datasheet
BCX19
Manufacturer Part Number
BCX19
Description
TRANSISTOR NPN 45V 500MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCX19.pdf
(3 pages)
Specifications of BCX19
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
620mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
0.3 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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©2002 Fairchild Semiconductor Corporation
NPN Medium Power Transistor
• This device is designed for general purpose amplifiers.
• Sourced from process 38.
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
I
I
On Characteristics
h
V
V
P
R
C
CBO
EBO
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CES
CE(sat)
BE(on)
D
Symbol
Symbol
, T
JA
Symbol
stg
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
T
Parameter
C
=25 C unless otherwise noted
Parameter
BCX19
- Continuous
I
I
V
V
V
I
I
I
I
I
C
C
C
C
C
C
C
CB
CB
EB
= 10mA, I
= 10 A, I
= 100mA, V
= 300mA, V
= 500mA, V
= 500mA, I
= 500mA, V
= 5.0V, I
= 20V, I
= 20V, I
Test Condition
C
B
E
E
C
B
= 0
= 0
= 0
= 0, T
CE
CE
CE
CE
= 0
= 50mA
= 1.0V
= 1.0V
= 1.0V
= 1.0V
A
= 150 C
1. Base 2. Emitter 3. Collector
-55 ~ +150
Min.
100
45
50
70
40
3
Value
500
5.0
45
50
Max.
300
417
2.4
Typ.
1
SOT-23
Mark: U1
Max.
0.62
100
600
5.0
1.2
10
Rev. A1, August 2002
mW/ C
2
Units
mW
Units
C/W
mW
V
V
V
C
Units
nA
V
V
V
V
A
A
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BCX19 Summary of contents
Page 1
... DC Current Gain FE V Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter On Voltage BE(on) Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation BCX19 T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition I = 10mA ...
Page 2
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A1, August 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...