MPS8598 Fairchild Semiconductor, MPS8598 Datasheet - Page 2
![TRANSISTOR PNP GEN PURP TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
MPS8598
Manufacturer Part Number
MPS8598
Description
TRANSISTOR PNP GEN PURP TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPS8598.pdf
(3 pages)
Specifications of MPS8598
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Power - Max
625mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
150 MHz
Dc Collector/base Gain Hfe Min
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS8598
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
MPS8598RLRA
Manufacturer:
ON
Quantity:
86 990
MPS8598 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
Electrical Characteristics
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
BV
BV
BV
I
I
I
h
V
V
C
C
f
Symbol
CBO
CEO
EBO
T
FE
CE
BE
ob
ib
CEO
EBO
CBO
(sat)
(on)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Cut-off Current
Collector-Emitter Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Input Capacitance
Current gain Bandwidth Product
Parameter
T
C
=25°C unless otherwise noted
I
I
I
V
V
V
V
V
V
I
I
V
V
V
V
C
C
E
C
C
CB
CB
EB
CE
CE
CE
CE
CB
EB
CE
= 10mA
= 10μA
= 100 mA, I
= 100 mA, I
= 100μA
= 4V
= 0.5V, f = 1MHz
= 60V
= 60V
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, f = 1MHz
= 5V, I
Test Condition
2
C
C
C
C
C
= 1.0mA
= 10mA
= 100mA
= 1mA
= 10mA, f = 100MHz
B
B
= 5 mA
= 10 mA
Min.
100
100
150
0.5
60
60
75
5
Typ.
Max.
MHz
300
0.1
0.1
0.1
0.4
0.3
0.7
30
8
www.fairchildsemi.com
Units
μA
μA
μA
pF
pF
V
V
V
V
V