TIS97 Fairchild Semiconductor, TIS97 Datasheet - Page 2

• Manufacturer Part Number: TIS97
• Description: TRANS GP NPN 40V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of TIS97

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Dc Collector/base Gain Hfe Min: 250
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Vce Saturation (max) @ Ib, Ic: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

OFF CHARACTERISTICS
ON CHARACTERISTICS*
h
V
V
I
I
C
C
h
NF
SMALL SIGNAL CHARACTERISTICS
Symbol
CBO
EBO
FE
BE(
fe
*
(BR)CEO
cb
eb
Electrical Characteristics
Pulse Test: Pulse Width
on
)
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Breakdown Voltage*
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
Noise Figure
300 s, Duty Cycle 2.0%
Parameter
TA = 25°C unless otherwise noted
V
V
I
f = 1.0 kHz
I
f = 100 MHz
V
R
B
V
R
I
V
V
V
V
V
C
C
C
CE
CE
CB
EB
CE
W
CE
CB
CB
EB
g
g
= 100 A, V
= 10 mA, V
= 10 mA, I
= 10 k , f = 1.0 kHz,
= 10 k , B
= 100 Hz
= 0.5 V, f = 1.0 MHz
= 6.0 V, I
= 5.0 V, I
= 5.0 V, I
= 5.0 V, f = 1.0 MHz
= 5.0 V, I
= 5.0 V, I
= 40 V, I
= 60 V, I
Test Conditions
B
E
E
C
C
C
C
C
CE
= 0
= 0
= 0
CE
W
= 30 A,
= 100 A,
= 0
= 100 A
= 100 A
= 5.0 V,
= 15.7 kHz
= 5.0 V,
NPN General Purpose Amplifier
Min
0.45
250
250
1.0
2.0
40
Max
0.65
800
700
4.0
2.0
3.0
16
10
10
20
(continued)
Units
dB
dB
pF
pF
nA
nA
V
V
A