MPSA65 Fairchild Semiconductor, MPSA65 Datasheet - Page 2

• Manufacturer Part Number: MPSA65
• Description: TRANSISTOR DARL PNP TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSA65

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20000
• Minimum Operating Temperature: - 55 C
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 10V
• Collector-emitter Saturation Voltage: 1.5V
• Collector Current (dc) (max): 1.2A
• Dc Current Gain: 50000
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
I
I
h
V
V
f
Symbol
CBO
EBO
T
FE
(BR)CES
CE(
BE(
Electrical Characteristics
*
Pulse Test: Pulse Width
on
sat
)
)
Collector-Em itter Breakdown
Voltage
Collector-Cutoff Current
Em itter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
300 s, Duty Cycle
Parameter
2.0%
TA = 25°C unless otherwise noted
I
V
V
I
I
I
I
I
f = 100 MHz
C
C
C
C
C
C
CB
EB
= 100 A, I
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, V
= 10 mA, V
= 30 V, I
= 8.0 V, I
Test Conditions
E
B
C
CE
CE
B
= 0
CE
CE
= 0
= 0
= 0.1 mA
= 5.0 V
= 5.0 V,
= 5.0 V
= 5.0 V
PNP Darlington Transistor
50,000
20,000
Min
100
30
Max
100
100
1.5
2.0
(continued)
Units
MHz
nA
nA
V
V
V