MPSA28 Fairchild Semiconductor, MPSA28 Datasheet - Page 2

• Manufacturer Part Number: MPSA28
• Description: TRANSISTOR DARL NPN TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSA28

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.8 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPSA28FS

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
I
h
V
V
f
C
Symbol
CBO
CES
EBO
T
FE
(BR)CES
(BR)CBO
(BR)EBO
CE(
BE(
obo
Electrical Characteristics
*
Typical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
on
sat
100
)
)
80
60
40
20
0.001
0
V = 5V
CE
Typical Pulsed Current Gain
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Output Capacitance
vs Collector Current
I - COLLECTOR CURRENT (A)
C
125 °C
25 °C
Parameter
0.01
- 40 °C
TA = 25°C unless otherwise noted
0.1
0.2
I
I
I
V
V
V
I
I
I
I
I
I
f = 100 MHz
V
C
C
E
C
C
C
C
C
C
CB
CE
EB
CB
= 100 A, V
= 100 A, I
= 10 A, I
= 10 mA, V
= 100 mA, V
= 10 mA, I
= 100 mA, I
= 100 mA, V
= 10 mA, V
= 60 V, I
= 60 V, V
= 10 V, I
= 1.0 V, I
Test Conditions
C
E
C
B
1.6
1.2
0.8
0.4
E
E
BE
CE
CE
= 0
B
BE
= 0
= 0.01 mA
0
= 0
CE
CE
= 0, f = 1.0 MHz
= 0
= 0.1 mA
1
= 5.0 V
= 5.0,
= 0
= 0
= 5.0 V
= 5.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
- 40 °C
= 1000
I - COLLECTOR CURRE NT (mA)
NPN Darlington Transistor
C
25 °C
10
10,000
10,000
Min
125
80
80
12
125 °C
100
MPSA28/MMBTA28/PZTA28, Rev A
Max
100
500
100
1.2
1.5
2.0
8.0
(continued)
Units
MHz
1000
nA
nA
nA
pF
V
V
V
V
V
3