MPS651 Fairchild Semiconductor, MPS651 Datasheet
MPS651
Manufacturer Part Number
MPS651
Description
TRANSISTOR NPN MED PWR TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPS651.pdf
(3 pages)
Specifications of MPS651
Transistor Type
NPN
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 500mA, 2V
Power - Max
625mW
Frequency - Transition
75MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
2 A
Power Dissipation
625 mW
Maximum Operating Frequency
75 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
75
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS651
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
MPS651-AP
Manufacturer:
MCC
Quantity:
6 000
Part Number:
MPS651-Y
Manufacturer:
KEC
Quantity:
20 000
Company:
Part Number:
MPS6513
Manufacturer:
FSC
Quantity:
2 117
Company:
Part Number:
MPS6513
Manufacturer:
FAIRCHILD
Quantity:
14 000
Part Number:
MPS6513
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
MPS6514
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
MPS6515
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Switching and Amplifier Applications
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
h
h
h
V
V
V
f
C
CBO
EBO
T
Symbol
FE1
FE2
FE3
FE4
J
STG
CBO
CEO
EBO
C
CE
BE
BE
CBO
CEO
EBO
Symbol
(sat)
(on)
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Band Width Product
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
MPS651
I
I
I
V
V
V
V
V
V
I
I
I
V
V
C
C
C
C
C
C
f=100MHz
CB
EB
CE
CE
CE
CE
CE
CE
=100 A, I
=10mA, I
=10 A, I
=1.0A, I
=2.0A, I
=1.0A, I
=4.0V, I
=80V, I
=2V, I
=2V, I
=2V, I
=2V, I
=2.0V, I
=5.0V, I
Test Condition
C
C
C
C
B
B
B
C
B
E
=100mA
=200mA
=100mA
=50mA
=500mA
=1.0A
=2.0A
C
C
C
E
=0
=0
=0
=0
=0
=1.0A
=50mA,
1. Emitter 2. Base 3. Collector
1
Min.
80
60
75
75
75
40
75
5
-55 ~ 150
Ratings
625
150
0.8
80
60
5
Typ.
TO-92
Max.
300
500
0.1
0.1
1.2
1.0
Units
mW
V
V
V
A
Rev. A, July 2002
C
C
Units
MHz
mV
V
V
V
V
V
A
A
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MPS651 Summary of contents
Page 1
... DC Current Gain FE1 h FE2 h FE3 h FE4 V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (on) Base-Emitter On Voltage BE f Current Gain Band Width Product T ©2002 Fairchild Semiconductor Corporation MPS651 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =10mA = ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, July 2002 ...
Page 3
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