MMBTA92-7 Diodes Inc, MMBTA92-7 Datasheet
MMBTA92-7
Manufacturer Part Number
MMBTA92-7
Description
TRANSISTOR PNP -300V SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.MMBTA92-7-F.pdf
(3 pages)
Specifications of MMBTA92-7
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 30mA, 10V
Power - Max
300mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MMBTA92DITR
MMBTA92TR
MMBTA92TR
MMBTA92TR
MMBTA92TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA92-7-F
Manufacturer:
DIODES
Quantity:
24 000
Part Number:
MMBTA92-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30060 Rev. 11 - 2
Epitaxial Planar Die Construction
Complementary NPN Types Available (MMBTA42)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
1.
2.
3.
4.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (R
No purposefully added lead. Halogen and Antimony Free.
θJA
), power dissipation rating (P
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
d
) and power derating curve (figure 1).
www.diodes.com
E
B
B
TOP VIEW
1 of 3
Symbol
V
V
V
V
V
C
G
H
C
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
h
C
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
CBO
EBO
f
D
FE
T
cb
A
E
Symbol
E
T
V
V
V
j
R
, T
J
P
I
CBO
CEO
EBO
Please click here to visit our online spice models database.
θJA
C
d
B C
STG
K
2
O
-300
-300
Min
-5.0
3
25
40
25
50
⎯
⎯
⎯
⎯
⎯
Fire Retardants.
L
Max
-250
-100
-0.5
-0.9
6.0
M
⎯
⎯
⎯
⎯
⎯
-55 to +150
Value
-300
-300
-500
-5.0
300
417
MHz
Unit
nA
nA
pF
⎯
V
V
V
V
V
Dim
All Dimensions in mm
MMBTA92
G
M
A
B
C
D
E
H
K
L
α
J
Test Condition
I
I
I
V
V
I
I
I
I
I
V
I
V
f = 100MHz
C
C
E
C
C
C
C
C
E
CB
CE
CB
CE
SOT-23
= -20mA, I
= -20mA, I
= -100μA, I
= -1.0mA, I
= -100μA, I
= -1.0mA, V
= -10mA, V
= -30mA, V
= 0
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
= -3.0V, I
= -200V, I
= -20V, f = 1.0MHz,
= -20V, I
Min
0°
© Diodes Incorporated
°C/W
Unit
mW
mA
°C
V
V
V
B
B
C
C
0.180
C
E
B
CE
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
E
= -2.0mA
= -2.0mA
CE
CE
= -10mA,
MMBTA92
= 0
8°
= 0
= 0
= 0
= 0
= -10V
= -10V
= -10V
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MMBTA92-7 Summary of contents
Page 1
... Test Condition ⎯ -100μ ⎯ -1.0mA ⎯ -100μ -250 -200V -100 -3.0V -1.0mA -10V C CE ⎯ ⎯ -10mA -10V -30mA -10V -20mA -2.0mA -20mA -2.0mA -20V 1.0MHz -20V -10mA, ⎯ MHz f = 100MHz MMBTA92 © Diodes Incorporated ...
Page 2
... 150° 25° -50° 100 I , COLLECTOR CURRENT (mA) C Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current -50° 25° 150° COLLECTOR CURRENT (mA) C Fig. 4, Base Emitter Voltage vs Collector Current © Diodes Incorporated 1000 100 MMBTA92 ...
Page 3
... Ordering Information (Note 6) Device MMBTA92-7-F Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 Code Month Jan Feb Code 1 2 Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...