FSB660A Fairchild Semiconductor, FSB660A Datasheet - Page 3

• Manufacturer Part Number: FSB660A
• Description: TRANSISTOR PNP 60V 2A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of FSB660A

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 75MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 2 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 75 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Results/Discussion
Test: (Autoclave)
Lot
Q20070473AAACLV
Q20070473ABACLV
Q20070473ACACLV
Q20070473BAACLV
Q20070473BBACLV
Q20070473BCACLV
Q20070473CAACLV
Q20070473DAACLV
Q20070473EAACLV
Q20070473FAACLV
Test: (High Humidity, High Temp, Rev. Bias)
Lot
Q20070473CAH3TRB
Q20070473FAH3TRB
Q20070473FBH3TRB
Test: (High Temperature Gate Bias)
Lot
Q20070473AAHTGB
Q20070473BAHTGB
Device
FDC658AP
FDN338P
Device
FDC637BNZ
FDC638APZ
Device
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC658AP
FAN2558SX
FDC365P
FDN338P
168-HOURS
0/77
0/77
0/77
168-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
500-HOURS
0/77
1000-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
Failure Code
Failure Code
Failure Code
Pg. 3