FSB749 Fairchild Semiconductor, FSB749 Datasheet

FSB749

Manufacturer Part Number

FSB749

Description

TRANSISTOR PNP 25V 3A SSOT-3

Manufacturer

Fairchild Semiconductor

Datasheet

1.FSB749.pdf (3 pages)

Specifications of FSB749

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

25V

Vce Saturation (max) @ Ib, Ic

600mV @ 300mA, 3A

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 1A, 2V

Power - Max

500mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

3-SSOT, SuperSOT-3

Configuration

Single

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

25 V

Emitter- Base Voltage Vebo

5 V

Continuous Collector Current

3 A

Maximum Dc Collector Current

3 A

Power Dissipation

0.5 W

Maximum Operating Frequency

100 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

100

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FSB749

Manufacturer:

PROTEK

Quantity:

1 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FSB749

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 3
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Symbol

Absolute Maximum Ratings*

1999 Fairchild Semiconductor Corporation

Thermal Characteristics

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

PNP Low Saturation Transistor

continuous. Sourced from Process PC.

CEO

CBO

EBO

NOTES:

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Symbol

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

stg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Total Device Dissipation

Thermal Resistance, Junction to Ambient

Parameter

SuperSOT

Characteristic

A = 25°C unless otherwise noted

FSB749

A = 25°C unless otherwise noted

-3

-55 to +150

FSB749

Max

500

250

fsb749.lwpPrPC revA

Units

°C/W

°C

Related parts for FSB749

FSB749 Summary of contents

Page 1

... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Total Device Dissipation P D Thermal Resistance, Junction to Ambient R JA 1999 Fairchild Semiconductor Corporation FSB749 25°C unless otherwise noted 25°C unless otherwise noted Characteristic FSB749 Units -55 to +150 °C Max Units FSB749 500 mW 250 °C/W fsb749.lwpPrPC revA ...

Page 2

... Test: Pulse Width 300 s, Duty Cycle 1999 Fairchild Semiconductor Corporation 25°C unless otherwise noted Test Conditions 100 100 =100° mA 100 300 100 1MHz 100 mA f=100MHz C CE 2.0% Min Max Units 100 100 100 300 75 15 300 mV 600 1. 100 pF 100 - fsb749.lwpPrPC revA ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...

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