BCP52 Fairchild Semiconductor, BCP52 Datasheet - Page 2

TRANSISTOR PNP 60V 1.2A SOT-223

BCP52

Manufacturer Part Number
BCP52
Description
TRANSISTOR PNP 60V 1.2A SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BCP52

Transistor Type
PNP
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
1.2 A
Maximum Dc Collector Current
1.2 A
Power Dissipation
1.5 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP52
Manufacturer:
NS
Quantity:
5
Part Number:
BCP52
Manufacturer:
NXP
Quantity:
20 000
Part Number:
BCP52
Manufacturer:
ST
0
Part Number:
BCP52
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BCP52-10
Manufacturer:
NXP
Quantity:
20 000
Part Number:
BCP52-10
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BCP52-16
Manufacturer:
NXP
Quantity:
20 000
Part Number:
BCP52-16
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BCP52-16 /
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BCP52-16 E6327
Quantity:
5 700
Part Number:
BCP52-16,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BCP52-16���ֻ� ��
Manufacturer:
ST
0
Part Number:
BCP5210
Manufacturer:
NXP
Quantity:
6 278
Company:
Part Number:
BCP5210TA
Quantity:
15 000
Company:
Part Number:
BCP52TA
Quantity:
3 000
V
V
V
I
I
ON CHARACTERISTICS
h
V
V
OFF CHARACTERISTICS
Symbol
CBO
EBO
FE
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
Electrical Characteristics
Typical Characteristics
on
sat
400
300
200
100
)
)
0
0.01
Typical Pulsed Current Gain
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
- 40 °C
vs Collector Current
I
C
- COLLECTOR CURRENT (A)
Parameter
25 °C
0.1
125 °C
V
CE
= 5V
TA = 25°C unless otherwise noted
1
I
I
I
V
V
V
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
CB
EB
= 10 mA, I
= 100 A, I
= 10 A, I
= 5.0 mA, V
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 30 V, I
= 30 V, I
= 5.0 V, I
Test Conditions
0.6
0.5
0.4
0.3
0.2
0.1
C
B
E
E
C
E
= 0
0
0.01
B
= 0
= 0
= 0, T
CE
= 0
CE
CE
CE
= 0
= 50 mA
= 2.0 V
PNP General Purpose Amplifier
= 2.0 V
= 2.0 V
= 2.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
A
= 10
= 125 C
I
C
- COLLE CTOR CURRENT (A)
0.1
Min
5.0
60
60
25
40
25
Max
100
250
0.5
1.0
10
10
25 °C
125 °C
- 40 °C
(continued)
Units
1 1.5
nA
V
V
V
V
V
A
A

Related parts for BCP52