BCP56 Fairchild Semiconductor, BCP56 Datasheet
BCP56
Manufacturer Part Number
BCP56
Description
TRANSISTOR NPN 80V 1.2A SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCP56.pdf
(3 pages)
Specifications of BCP56
Transistor Type
NPN
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1.2 A
Maximum Dc Collector Current
1.2 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP56
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BCP56,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BCP56-10
Manufacturer:
NXP
Quantity:
80 000
Part Number:
BCP56-10
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BCP56-10 E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BCP56-10,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BCP56-10T1
Manufacturer:
ON
Quantity:
3 110
Company:
Part Number:
BCP56-10T1G
Manufacturer:
ONSEMI
Quantity:
987
Company:
Part Number:
BCP56-10T1G
Manufacturer:
ON
Quantity:
30 000
1998 Fairchild Semiconductor Corporation
Symbol
V
V
V
I
T
P
R
Absolute Maximum Ratings*
Thermal Characteristics
C
NPN General Purpose Amplifier
These devices are designed for
currents to 1A. Sourced from Process 39.
J,
CEO
CBO
EBO
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
Symbol
D
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
JA
T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Derate above 25°C
C
BCP56
Parameter
general purpose medium power amplifiers and switches requiring collector
Characteristic
B
SOT-223
T
A = 25°C unless otherwise noted
C
E
T
A = 25°C unless otherwise noted
-55 to +150
2
.
BCP56
100
1.2
80
BCP56
5
Max
125
1
8
mW/°C
Pr3947_REV A
Units
Units
°C/W
°C
V
V
V
A
W
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BCP56 Summary of contents
Page 1
... FR-4 PCB 1.5 mm; mounting pad for the collector lead min 1998 Fairchild Semiconductor Corporation SOT-223 25°C unless otherwise noted 25°C unless otherwise noted Characteristic BCP56 Units 80 V 100 1.2 A -55 to +150 °C Max Units BCP56 mW/°C 125 °C Pr3947_REV A ...
Page 2
NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BV CEO Collector-Base Breakdown Voltage BV CBO Emitter-Base Breakdown Voltage BV EBO Collector Cutoff Current I CBO Emitter Cutoff Current I EBO ON CHARACTERISTICS* DC Current ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...