TN6727A_D74Z Fairchild Semiconductor, TN6727A_D74Z Datasheet
TN6727A_D74Z
Manufacturer Part Number
TN6727A_D74Z
Description
TRANS GP PNP 40V 1.5A TO-226
Manufacturer
Fairchild Semiconductor
Datasheet
1.TN6727A.pdf
(3 pages)
Specifications of TN6727A_D74Z
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 1A, 1V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Symbol
V
V
V
I
T
Absolute Maximum Ratings*
C
P
R
R
Thermal Characteristics
PNP General Purpose Amplifier
J,
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to
1A. Sourced from Process 77. See TN6726A for characteristics.
CES
CBO
EBO
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
Symbol
D
1997 Fairchild Semiconductor Corporation
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
JC
JA
T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C B
Derate above 25°C
E
TN6727A
Parameter
Characteristic
T
A = 25°C unless otherwise noted
TO-226
T
A = 25°C unless otherwise noted
Page 1 of 2
-55 to +150
Value
TN6727A
1.5
40
50
5
Max
125
50
1
8
mW/°C
Units
Units
°C/W
°C/W
°C
V
V
V
A
W
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TN6727A_D74Z Summary of contents
Page 1
... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Total Device Dissipation P D Derate above 25°C Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO-226 25°C unless otherwise noted 25°C unless otherwise noted Characteristic Page Value Units ...
Page 2
PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BV CEO Collector-Base Breakdown Voltage BV CBO Emitter-Base Breakdown Voltage BV EBO Collector Cutoff Current I CBO Emitter Cutoff Current I EBO ON CHARACTERISTICS* DC Current ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...