BSP51 Fairchild Semiconductor, BSP51 Datasheet
BSP51
Manufacturer Part Number
BSP51
Description
TRANSISTOR DARL NPN 60V SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSP51.pdf
(3 pages)
Specifications of BSP51
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 150mA, 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
60V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSP51
Manufacturer:
INFINEON
Quantity:
1 000
Part Number:
BSP51
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
BSP51115
Manufacturer:
NXP Semiconductors
Quantity:
1 875
©2007 Fairchild Semiconductor Corporation
BSP51 Rev. A
BSP51
NPN Darlington Transistor
Absolute Maximum Ratings
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Off Characteristics
On Characteristics
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
V
V
V
I
T
V
V
I
I
h
V
V
Symbol
C
CES
EBO
J,
FE
CES
CBO
EBO
(BR)CBO
(BR)EBO
CE(
BE(
Symbol
This device is designed for applications requiring extremly high current gain at collector currents to 500mA.
Sourced from process 03.
T
sat
sat
STG
)
)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (Continuous)
Junction Temperature, Storage Temperature
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Parameter
Parameter
4
* T
a
1
* T
= 25°C unless otherwise noted
a
*
= 25°C unless otherwise noted
2
*
I
I
V
V
I
I
I
I
3
C
E
C
C
C
C
CE
EB
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, I
= 100 μA, I
= 10 μA, I
= 80 V, I
= 4.0 V, I
SOT-223
1. Base 2. Collector 3. Emitte
Test Condition
1
C
BE
C
E
= 0
B
B
= 0
= 0
CE
CE
= 0
= 0.5 mA
= 0.5 mA
= 10 V
= 10 V
-55 ~ +150
Value
500
5.0
80
90
MIN
1000
2000
5.0
90
r
MAX
1.3
1.9
10
10
www.fairchildsemi.com
June 2007
Units
mA
°C
V
V
V
Units
μA
μA
V
V
V
V
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BSP51 Summary of contents
Page 1
... FE V Collector-Emitter Saturation Voltage sat CE Base-Emitter Saturation Voltage sat BE Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2007 Fairchild Semiconductor Corporation BSP51 Rev. A SOT-223 3 1. Base 2. Collector 3. Emitte 25°C unless otherwise noted a -55 ~ +150 * T = 25°C unless otherwise noted a Test Condition = 100 μ ...
Page 2
... Thermal Characteristics Symbol Characteristic Total Device Dissipation P D Derate above 25°… Thermal Resistance, Junction to Ambient R θ JA *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. BSP51 Rev 25°C unless otherwise noted a 2 Max Units mW 1000 mW/℃ 8.0 ℃/W 125 ...
Page 3
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BSP51 Rev. A OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...