TN6714A Fairchild Semiconductor, TN6714A Datasheet - Page 2

• Manufacturer Part Number: TN6714A
• Description: TRANS GP NPN 30V 2A TO-226
• Manufacturer: Fairchild Semiconductor

Specifications of TN6714A

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 1A, 1V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
C
h
V
V
Symbol
CBO
EBO
fe
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
*
Typical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%
sat
on
500
400
300
200
100
)
)
0.001
0
Typical Pulsed Current Gain
V
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small-Signal Current Gain
Collector-Base Capacitance
CE
- 40 °C
vs Collector Current
= 5V
I
C
- COLLECTOR CURRENT (A)
0.01
Parameter
25 °C
125 °C
0.1
TA= 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
I
I
f = 20 MHz
V
1
C
C
E
C
C
C
C
C
C
CB
EB
CB
= 100 A, I
= 10 mA, I
= 100 A, I
= 10 mA, V
= 100 mA, V
= 1.0 A, V
= 1.0 A, I
= 1.0 A, V
= 50 mA, V
= 5.0 V, I
= 40 V, I
= 10 mA, I
Test Conditions
B
CE
CE
0.01
B
E
= 100 mA
C
C
E
CE
CE
0.1
= 0
= 0
E
= 0
CE
= 1.0 V
= 1.0 V
= 0
= 0
1
0.01
= 1.0 V
= 10 V,
= 0, f = 1.0 MHz
NPN General Purpose Amplifier
= 1.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
= 10
I
C
125 °C
- COLLE CTOR CURRENT (A)
Min
- 40 °C
5.0
2.5
30
40
55
60
50
0.1
25 °C
Max
250
0.1
0.1
0.5
1.2
25
30
(continued)
Units
pF
V
V
V
V
V
A
A
1
3