FJT44TF Fairchild Semiconductor, FJT44TF Datasheet - Page 2

• Manufacturer Part Number: FJT44TF
• Description: TRANSISTOR NPN 400V 300MA SOT223
• Manufacturer: Fairchild Semiconductor

Specifications of FJT44TF

• Transistor Type: NPN
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.3 A
• Dc Collector/base Gain Hfe Min: 50
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

FJT44 Rev. B1
© 2009 Fairchild Semiconductor Corporation
Electrical Characteristics*
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol
V
V
BV
BV
BV
I
CE(sat)
BE(sat)
C
I
I
h
CBO
CES
EBO
obo
FE
CBO
CEO
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage I
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Parameter
T
A
= 25°C unless otherwise noted
I
I
V
V
V
V
V
V
V
I
I
I
I
V
C
C
E
C
C
C
C
CB
CE
CE
CE
CE
CE
CE
CB
= 100μA, I
= 100μA, I
= 1mA, I
= 1mA, I
= 10mA, I
= 50mA, I
= 10mA, I
=10V, I
=10V, I
=10V, I
=10V, I
= 400V, I
= 400V, V
= 4V, I
= 20V, I
Test Conditions
2
B
C
C
C
C
C
B
=1mA
=10mA
=50mA
=100mA
B
B
B
E
= 0
C
= 0.1mA
E
= 0
E
= 1mA
= 5mA
= 1mA
= 0, f = 1MHz
BE
= 0
= 0
= 0
= 0
Min.
500
400
40
50
45
40
6
Typ.
Max.
0.75
0.75
100
500
100
200
0.4
0.5
7
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Units
nA
nA
nA
pF
V
V
V
V
V
V
V