BD434S Fairchild Semiconductor, BD434S Datasheet
BD434S
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... Emitter-Base Voltage EBO I Collector Current (DC *Collector Current (Pulse Base Current B P Collector Dissipation ( Junction Temperature J T Storage Temperature STG ©2001 Fairchild Semiconductor Corporation BD434/436/438 T =25 C unless otherwise noted C Parameter : BD434 : BD436 : BD438 : BD434 : BD436 : BD438 : BD434 : BD436 : BD438 = TO-126 1 1. Emitter 2 ...
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... Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Test Condition : BD434 100mA BD436 : BD438 22V BD434 32V, I ...
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... BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage -10 I MAX. (Pulsed Max. (Continuous BD434 BD436 BD438 -0.1 -1 -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation - -1V CE -0.1 -0.01 -10 -100 -0.1 Figure 2. Collector-Emitter Saturation Voltage -1000 V = -1V CE -100 -10 -1 -1.3 -1.5 -1.8 -2 ...
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... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...