TIP29A Fairchild Semiconductor, TIP29A Datasheet - Page 2

• Manufacturer Part Number: TIP29A
• Description: TRANS GP NPN 1A 100V TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of TIP29A

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 125mA, 1A
• Current - Collector Cutoff (max): 300µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 1A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 15
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 40
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP29AFS

TIP29/TIP29A/TIP29B/TIP29C Rev. A
© 2008 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: PW≤300ms, Duty Cycle≤2%
V
I
I
I
h
V
V
f
CEO
EBO
CES
T
FE
CEO
CE
BE
Symbol
(sat)
(sat)
(sus)
*Collector-Emitter Sustaining Voltage
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Parameter
: TIP29/29A
: TIP29B/29C
T
C
: TIP29
: TIP29A
: TIP29B
: TIP29C
: TIP29
: TIP29A
: TIP29B
: TIP29C
=25°C unless otherwise noted
I
V
V
V
V
V
V
V
V
V
I
V
V
2
C
C
CE
CE
CE
CE
CE
CE
EB
CE
CE
CE
CE
= 30mA, I
= 1A, I
= 5V, I
= 30V, I
= 60V, I
= 40V, V
= 60V, V
= 80V, V
= 100V, V
= 4V, I
= 4V, I
= 4V, I
= 10V, I
B
Test Condition
C
= 125mA
C
C
C
B
B
B
C
= 0
= 0.2A
= 1A
= 1A
EB
EB
EB
= 0
= 0
= 0
= 200mA
EB
= 0
= 0
= 0
= 0
Min.
100
3.0
40
60
80
40
15
Max.
200
200
200
200
0.3
0.3
1.0
0.7
1.3
75
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Units
MHz
mA
mA
mA
μA
μA
μA
μA
V
V
V
V
V
V