MJD47TF Fairchild Semiconductor, MJD47TF Datasheet

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... EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW 300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation MJD47/ =25 C unless otherwise noted C Parameter : MJD47 : MJD50 : MJD47 : MJD50 = = =25 C unless otherwise noted ...

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... Figure 1. DC current Gain 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Turn On Time 10 I (max (max) C 0.1 0.01 1E [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0.1 0. 0.01 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 200V 0.1 0. 0.01 20 ...

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... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...